Infineon IPB020N08N5ATMA1: High-Performance 80V OptiMOS 5 Power MOSFET

In the realm of power electronics, efficiency, power density, and reliability are paramount. The Infineon IPB020N08N5ATMA1 stands as a premier solution, embodying the advanced OptiMOS™ 5 technology to meet these demanding requirements. This 80V N-channel power MOSFET is engineered to deliver exceptional performance in a wide array of applications, from industrial motor drives and robotics to telecom infrastructure and power supplies.

The core of this device's superiority lies in its extremely low figure-of-merit (R DS(on) x Q G). With a maximum drain-source on-state resistance (R DS(on)) of just 2.0 mΩ at 10 V, it minimizes conduction losses significantly. This allows for higher efficiency operation, as less energy is wasted as heat. Furthermore, its optimized gate charge (Q G) ensures swift switching transitions, which is critical for high-frequency applications. Reduced switching losses enable designers to push for higher switching frequencies, which in turn permits the use of smaller passive components like inductors and capacitors, leading to more compact and cost-effective system designs.

Housed in the robust TO-Leadless (TOLL) package, the IPB020N08N5ATMA1 offers an excellent thermal performance and power density. The package's low profile and small footprint make it an ideal choice for space-constrained applications. Its superior switching performance and high reliability are further enhanced by features such as a high maximum continuous drain current (I D) of 200 A and an avalanche ruggedness that ensures robustness under extreme operating conditions.

ICGOOODFIND: The Infineon IPB020N08N5ATMA1 is a top-tier 80V power MOSFET that sets a high bar for performance. Its exceptional combination of ultra-low R DS(on), fast switching capability, and excellent thermal characteristics in the TOLL package makes it a pivotal component for engineers aiming to maximize efficiency and power density in next-generation power conversion systems.

Keywords: OptiMOS™ 5 Technology, Low R DS(on), High Switching Frequency, TOLL Package, Avalanche Ruggedness.