Infineon IPP60R190P6: A 190mΩ Superjunction MOSFET Engineered for High-Efficiency Power Conversion
The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power conversion systems. At the heart of these systems, the switching MOSFET is a critical component whose performance directly impacts overall efficacy. The Infineon IPP60R190P6 stands out as a premier solution, leveraging advanced superjunction (SJ) technology to set a new benchmark in switching performance and thermal management for a wide range of applications.
This MOSFET is characterized by its extremely low typical on-state resistance (R DS(on)) of just 190mΩ. This ultralow resistance is the cornerstone of its efficiency, as it minimizes conduction losses during operation. When a device is in its on-state, the primary source of power loss is the I²R dissipation. By drastically reducing the R DS(on), the IPP60R190P6 ensures that less energy is wasted as heat, making it exceptionally suitable for high-current applications. This is particularly vital in systems like server and telecom SMPS (Switch-Mode Power Supplies), where energy efficiency translates directly into operational cost savings and reduced cooling requirements.
Beyond its impressive conduction characteristics, the device excels in dynamic performance. The superjunction structure enables a superior switching speed with minimized switching losses. Fast switching is essential for increasing the operating frequency of power converters, which allows for the use of smaller passive components like inductors and capacitors. This directly contributes to higher power density designs. Furthermore, the IPP60R190P6 features low gate charge (Q G). A lower gate charge means the drive circuit can turn the device on and off more quickly and with less energy, simplifying gate drive design and further enhancing efficiency, especially at high frequencies.
The benefits of this MOSFET extend to ruggedness and reliability. It offers an excellent avalanche ruggedness and a high body diode dv/dt capability. This robustness ensures the device can handle voltage spikes and stressful conditions often encountered in hard-switching topologies like PFC (Power Factor Correction) circuits, flyback converters, and motor drive inverters. Its ability to withstand these events enhances the overall durability and longevity of the end product.
Thermal performance is another area of strength. The low R DS(on) inherently reduces heat generation, and the device is packaged in a TO-220 FullPAK. This package features a fully molded plastic construction that provides enhanced isolation and superior creepage distances, improving safety and reliability. The package also offers excellent thermal characteristics, efficiently transferring heat to a heatsink to maintain a lower operating temperature under heavy load.
ICGOODFIND: The Infineon IPP60R190P6 is a top-tier superjunction MOSFET that masterfully balances ultralow conduction loss, fast switching speed, and exceptional ruggedness. It is an optimal choice for designers aiming to push the boundaries of efficiency and power density in modern AC-DC and DC-DC power conversion systems.
Keywords: Superjunction MOSFET, Low RDS(on), High-Efficiency Power Conversion, Low Gate Charge, Avalanche Ruggedness.
